FFP08S60SNTU_G【PDF 1/5 页】DIODE STEALTH 600V 8A TO-220AC

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November 2013

FFP008S60SN —

STEALTH? II Diode

?2008 Fairchild Semiconductor Corporation

FFP008S60SN Rev. C1

www.fairchildsemi.com

FFP08S60SN

8 A, 600 V STEALTHTM

II Diode

Features

? Stealth Recovery trr = 25 ns (@ IF = 8 A)

? Max Forward Voltage, VF = 3.4 V (@ TC = 25°C)

? 600 V Reverse Voltage and High Reliability

? Improved dv/dt Capability

? RoHS Compliant

Applications

? General Purpose

? SMPS, Power Switching Circuits

? Boost Diode in Continuous Mode Power Factor Corrections

Description

The FFP08S60SN is a STEALTH? II diode with soft recovery

characteristics. It is silicon nitride passivated ion-implanted epi-

taxial planar construction.

This device is intended for use as freewheeling of boost diode in

switching power supplies and other power swithching applica-

tions. Their low stored charge and hyperfast soft recovery mini-

mize ringing and electrical noise in many power switching circuits

reducing power loss in the switching transistors.

Absolute Maximum Ratings

TC = 25oC unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Rating Unit

VRRM

Peak Repetitive Reverse Voltage 600 V

VRWM

Working Peak Reverse Voltage 600 V

DC Blocking Voltage 600 V

IF(AV)

Average Rectified Forward Current @ TC

= 89

oC 8 A

IFSM

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

60 A

TJ, TSTG

Operating and Storage Temperature Range -65 to +150

Symbol Parameter Max. Unit

R?JC

Maximum Thermal Resistance, Junction to Case 3.6

oC/W

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FFP08S60SNTU FFP08S60SN TO-220-2L Tube N/A N/A

1. Cathode 2. Anode

TO-220-2L

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